DMN100-7-F
Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMN100-7-F
Datasheet:
Description:
MOSFETs SC-59 SMD/SMT N-Channel number of channels:1 500 mW 30 V Continuous Drain Current (ID):1.1 A 5.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 3.1 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 240 mΩ |
| Height | 1.3 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 1.1 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 150 pF |
| Continuous Drain Current (ID) | 1.1 A |
| Rds On Max | 240 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Rise Time | 15 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 5.5 nC |
| Drain to Source Resistance | 170 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||